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1200V/10A Silicon Carbide Power Schottky Barrier Diode G5s12010c to-252 Transistor
5.0InStock Source-listed auditby Dongguan Meizhao Electronics Co., Ltd.
₹64≈ $0.77 · indicative, confirm with supplier
Payment
Description
1200V/10A Silicon Carbide Power Schottky Barrier Diode G5s12010c to-252 Transistor, Find Details and Price about G5s12010c to-252 Transistor Sic Diode from 1200V/10A Silicon Carbide Power Schottky Barrier Diode G5s12010c to-252 Transistor - Dongguan Meizhao Electronics Co., Ltd.
Specifications
OriginGuangdong, China
FunctionSwitch Transistor
MaterialSilicon
Features1Zero Reverse Recovery Current
Features2Zero Forward Recovery Voltage
Features3Temperature Independent Switching Behavior
Features4High Temperature Operation
Features5High Frequency Operation
Model NO.G5S12010C
StructurePlanar
TrademarkMerryelc
Power LevelHigh Power
